Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal
Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal
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DOI：
10.1063/1.4940924
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发表时间：
2016-01
期刊：
影响因子：
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通讯作者：
Desheng Wu;J. Liao;W. Yi;Xia Wang;Peigang Li;H. Weng;Youguo Shi;Yongqing Li;Jian-lin Luo-
中科院分区：
文献类型：
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作者：
Desheng Wu;J. Liao;W. Yi;Xia Wang;Peigang Li;H. Weng;Youguo Shi;Yongqing Li;Jian-lin Luo-
本文报道了在高迁移率的TaAs 2半金属单晶中观察到的巨大正磁电阻效应。在很宽的温度范围内（T = 2-300 K），磁共振与磁场B的二次函数拟合良好，表明磁共振具有半经典性质。霍尔效应和Shubnikov-de哈斯振荡的测量以及能带结构的计算表明，巨磁共振起源于TaAs 2中几乎完全补偿的电子和空穴。在B = 9 T和T = 2 K时，二次MR甚至可以超过1，200，000%，这是包括最近发现的WTe 2和NbSb 2在内的所有已知半金属化合物的最大值之一。TaAs_2中的巨正磁电阻不仅与磁系统中的负巨磁电阻有着根本不同的起源，而且提供了一个很好的互补系统，这将有利于在磁电子器件中的应用
We report the observation of colossal positive magnetoresistance (MR) in single crystalline, high mobility TaAs2 semimetal. The excellent fit of MR by a single quadratic function of the magnetic field B over a wide temperature range (T = 2-300 K) suggests the semiclassical nature of the MR. The measurements of Hall effect and Shubnikov-de Haas oscillations, as well as band structure calculations suggest that the giant MR originates from the nearly perfectly compensated electrons and holes in TaAs2. The quadratic MR can even exceed 1,200,000% at B = 9 T and T = 2 K, which is one of the largest values among those of all known semi-metallic compounds including the very recently discovered WTe2 and NbSb2. The giant positive magnetoresistance in TaAs2, which not only has a fundamentally different origin from the negative colossal MR observed in magnetic systems, but also provides a nice complemental system that will be beneficial for applications in magnetoelectronic devices