Methods for passive fiber chip coupling of integrated optical devices
Methods for passive fiber chip coupling of integrated optical devices
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集成光器件的无源光纤芯片耦合方法
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
F. Arndt
中科院分区：
文献类型：
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作者：
R. Hauffe;U. Siebel;K. Petermann;R. Moosburger;J. Kropp;F. Arndt
将单模光纤高精度无源耦合到集成光学器件的有用技术对于经济高效的封装至关重要，尤其是在交换机和其他 WDM 组件等多端口器件中。这些器件是在两种不同的材料基础上制造的：SOI 和聚合物。在这两种情况下，波导均基于超大肋形波导概念并利用硅作为基板。介绍并比较了这种无源光纤芯片耦合 IN 或 ON 硅的两种可能的制造工艺。第一种方法涉及类似于使用基板和上基板的倒装芯片制造的技术，该技术允许单独处理用于光纤对准和集成光学器件的 V 形槽。芯片的自对准安装是通过湿法化学蚀刻形成的V形肋-凹槽组合来实现的，其中肋是凹槽的精确负片，以便倒装芯片被放置在精确定义的晶面上而不是敏感边缘上。第二种方法对波导和光纤对准结构使用相同的芯片，这使得可以在相同的光刻步骤中定义两者，从而消除任何垂直位移。加工困难主要源于光纤对准V型槽和集成波导完全不同的加工要求。由于需要在深槽附近限定尺寸仅为几个/splμ/m的图案，因此必须使用电泳光致抗蚀剂。这两种工艺均可实现 sub-/spl mu/m 范围内的光纤芯片对准精度，并且经过实验验证，每个端面的耦合损耗低至 0.7 dB。介绍了制造过程以及实验和理论结果。
A useful technique for high precision passive coupling of single mode optical fibres to integrated optical devices is crucial for cost effective packaging especially in multiport devices like switches and other WDM components. These devices were fabricated on two different material bases, SOI and polymers. In both cases the waveguides are based on the oversized rib waveguide concept and utilize silicon as a substrate. Two possible fabrication processes for this passive fiber chip coupling IN or ON silicon are presented and compared. The first approach involves a technology similar to flip chip fabrication using a sub- and superstrate, that allows a separate processing of V-grooves for fiber alignment and the integrated optical devices. The self aligned mounting of the chip is achieved by a V-shaped rib-groove combination created by wet chemical etching, where the rib is the exact negative of the groove so that the flip chip is put on precisely defined crystal planes rather than on sensitive edges. The second approach utilizes the same chip for waveguides and fiber alignment structures which makes it possible to define both in the same lithographic step and thereby eliminating any vertical displacement. Processing difficulties arise primarily from completely different processing requirements of fiber aligning V-grooves and integrated waveguides. The need to define patterns of the size of only several /spl mu/m in the proximity to deep grooves makes the use of an electrophoretic photoresist necessary. Both processes allow for fiber chip alignment precisions in the sub-/spl mu/m range which was also experimentally verified with coupling losses as low as 0.7 dB per end-face. The fabrication processes along with experimental and theoretical results are presented.