Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition
Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition
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原子层沉积制备的 Ti 掺杂 ZnO 薄膜的结构、电学和光学特性
DOI：
10.1186/1556-276x-8-108
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发表时间：
2013-02-27
影响因子：
--
通讯作者：
Zhang, David Wei
中科院分区：
文献类型：
--
作者：
Ye, Zhi-Yuan;Lu, Hong-Liang;Zhang, David Wei
采用原子层沉积法（ALD）在200 A ℃下，在Si、热生长SiO2和石英衬底上制备了不同Ti掺杂浓度的高质量Ti掺杂ZnO薄膜。异丙醇钛、二乙基锌和去离子水分别是Ti、Zn和O的来源。然后通过交替生长ZnO和TiO 2来实现Ti掺杂。一个阻碍生长模式的ZnO上的TiO 2层被证实通过比较的厚度由椭圆偏振光谱测量与预期的。随着Ti含量的增加，（100）衍射峰位置向低衍射角方向移动。对于所有样品，在可见光区获得超过80%的光学透射率。ZnO/TiO 2的ALD循环比为20的样品具有最低的电阻率，为8.874 × 10（-4）Ω cm。随着Ti掺杂浓度的增加，薄膜的载流子浓度先明显增加后降低。
High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200A degrees C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was confirmed by comparing the thicknesses measured by spectroscopic ellipsometry with the expected. It was also found that the locations of the (100) diffraction peaks shift towards lower diffraction angles as Ti concentration increased. For all samples, optical transmittance over 80% was obtained in the visible region. The sample with ALD cycle ratio of ZnO/TiO2 being 20 had the lowest resistivity of 8.874 x 10(-4) Omega cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration.