Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
复制标题
采用 MOCVD 生长的 Al2O3 栅极绝缘体的 4H-SiC MOSFET 的制造和表征
DOI：
10.4028/www.scientific.net/msf.556-557.787
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
E. Tokumitsu
中科院分区：
文献类型：
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作者：
S. Hino;T. Hatayama;N. Miura;T. Oomori;E. Tokumitsu
我们用Al_2O_3作为栅绝缘体制作了MOS电容和横向MOSFET，并对其进行了表征。以三乙基铝和水为前驱体，采用金属-有机化学气相沉积(MOCVD)方法，在低至190℃的温度下制备了Al_2O_3薄膜。我们首先从电容-电压(C-V)测量中证明了Al_2O_3/SiC界面的界面态密度比热生长的SiO_2/SiC界面低。Al_2O_3/SiC界面的X-射线光电子能谱(XPS)的Si2p谱与碳化硅衬底的X射线光电子能谱(XPS)没有显著差异，说明碳化硅衬底在沉积过程中没有被氧化。其次，我们发现采用Al_2O_3栅绝缘层制作的横向SiC-MOSFET具有良好的漏极电流-漏极电压(ID-VD)和漏极电流-栅极电压(ID-VG)特性，并且具有正常关断特性。获得的场效应迁移率峰值(μ_E)在68~88 cm~2/vs之间。
We have fabricated and characterized MOS capacitors and lateral MOSFETs using Al2O3 as a gate insulator. Al2O3 films were deposited by metal-organic chemical vapor deposition (MOCVD) at temperatures as low as 190 oC using tri-ethyl-aluminum and H2O as precursors. We first demonstrate from the capacitance – voltage (C-V) measurements that the Al2O3/SiC interface has lower interface state density than the thermally-grown SiO2/SiC interface. No significant difference was observed between X-ray photoelectron spectroscopy (XPS) Si 2p spectrum from the Al2O3/SiC interface and that from the SiC substrate, which means the SiC substrate was not oxidized during the Al2O3 deposition. Next, we show that the fabricated lateral SiC-MOSFETs with Al2O3 gate insulator have good drain current – drain voltage (ID-VD) and drain current – gate voltage (ID-VG) characteristics with normally-off behavior. The obtained peak values of field-effect mobility (μFE) are between 68 and 88 cm2/Vs.