Effect of Ambient Oxygen Partial Pressure on the Hydrogen Response of SnO2 Semiconductor Gas Sensors
Effect of Ambient Oxygen Partial Pressure on the Hydrogen Response of SnO2 Semiconductor Gas Sensors
复制标题
DOI：
10.1149/2.1391906jes
复制
发表时间：
2019
影响因子：
3.9
通讯作者：
K. Suematsu;Ken Watanabe;M. Yuasa;T. Kida;K. Shimanoe
中科院分区：
文献类型：
--
作者：
K. Suematsu;Ken Watanabe;M. Yuasa;T. Kida;K. Shimanoe
在这项研究中，氧分压（PO 2）对传感器的响应，以H2的SnO 2连续型气体传感器的影响进行了评估在各种潮湿的气氛下。采用水热法合成了直径为8-15 nm的SnO 2纳米粒子，然后在600°C下煅烧。此外，在纳米颗粒中证实了大量直径大于10 nm的孔。在350°C下的电阻随着PO 2的降低而降低，并且在10 ppm H2存在下的电阻比在干燥和潮湿气氛中不存在H2的情况下的电阻小得多，而与PO 2无关。此外，传感器在350°C下对10 ppm H2的响应随着干燥和潮湿气氛中PO 2的减少而增加。因此，减少氧吸附量增强了SnO 2表面上通过H2和吸附的氧之间的燃烧反应形成根羟基的效果，并提高了传感器对H2的响应。这些结果对于理解气体检测的基本机理和高灵敏度连续型半导体气体传感器的材料表面设计具有重要意义。
In this study, the influence of the oxygen partial pressures (PO2) on the sensor response to H2 of SnO2 resistive-type gas sensors was evaluated under various humid atmospheres. SnO2 nanoparticles of 8–15 nm in diameter were synthesized using a hydrothermal technique followed by calcination at 600°C. Additionally, a large amount of pores with diameters greater than 10 nm was confirmed in the nanoparticles. The electrical resistance at 350°C was decreased with decreasing the PO2, and the electrical resistance in the presence of 10 ppm H2 was much smaller than that in the absence of H2 in both dry and humid atmospheres regardless of the PO2. Furthermore, the sensor response to 10 ppm H2 at 350°C increased with decreasing PO2 in both dry and humid atmospheres. Thus, decreasing the amount of oxygen adsorption enhanced the effect of rooted hydroxyl formation on the SnO2 surface through a combustion reaction between H2 and adsorbed oxygen and improved the sensor response to H2. These results are important for understanding the fundamental mechanisms of gas detection and for the material surface design of highly sensitive resistive-type semiconductor gas sensors.