Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG
Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG
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通过 DMA SRAM TEG 分析 DIBL 变化对 SRAM 静态噪声容限的影响
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
T. Hiramoto
中科院分区：
文献类型：
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作者：
X. Song;Makoto Suzuki;T. Saraya;A. Nishida;T. Tsunomura;Shiro Kamohara;Kiyoshi Takeuchi;S. Inaba;Tohru Mogami;T. Hiramoto
利用16k位器件矩阵阵列（DMA）SRAM TEG直接测量了SRAM单元中各个晶体管的静态噪声容限（SNM）<inf>、Vth</inf>、<inf>gm</inf>、体因子和漏致势垒降低（DIBL）。结果发现，除了<inf>Vth的</inf>变化，DIBL的变化降低SRAM的稳定性和<inf>VDD的</inf>依赖性，而g<inf>m</inf>和体因子的变化只有很小的影响。
The static noise margin (SNM) as well as V<inf>th</inf>, g<inf>m</inf>, body factor, and drain-induced-barrier-lowering (DIBL) in individual transistors in SRAM cells are directly measured by 16k bit device-matrix-array (DMA) SRAM TEG. It is found that, besides V<inf>th</inf> variability, DIBL variability degrades SRAM stability and its V<inf>dd</inf> dependence while the variability of g<inf>m</inf> and body factor has only a small effect.