Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting
Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting
复制标题
在 ZnO 纳米线上低温外延生长高质量 GaON 薄膜，实现卓越的光电化学水分解
DOI：
10.1016/j.nanoen.2019.104089
复制
发表时间：
2019-12
期刊：
影响因子：
17.6
通讯作者：
Zhang David Wei
中科院分区：
文献类型：
--
作者：
Ma Hong-Ping;Yang Jia-He;Tao Jia-Jia;Yuan Kai-Ping;Cheng Pei-Hong;Huang Wei;Wang Jia-Cheng;Guo Qi-Xin;Lu Hong-Liang;Zhang David Wei
Gallium oxynitride (GaON) is an emerging material suitable as a key component to build efficient heterostructures for photoelectrochemical (PEC) water splitting. However, the great difficulty in controlled growth of GaON films limits their applications. This study developed a novel method for depositing highly uniform GaON films by a one-step co-deposition processviaplasma-enhanced atomic layer deposition (ALD). Importantly, this material presents high-quality epitaxial growth behavior on ZnO nanowires (NWs) only at 200 °C to construct ZnO-GaON core-shell NWs with different shell thickness (5–60 nm). Benefiting from the precisely controlled ALD technique, thickness-dependent PEC performance and its mechanism were studied deeply. It was found the ZnO-GaON NWs with an optimum shell thickness (~40 nm) presented largest electric field enhancement and light-trapping ability, thus greatly improved the photocurrent from ~0.24 (pristine ZnO) to 2.25 mA/cm2at 1.23 V versus reversible hydrogen electrode. Meanwhile, this structure presents an ultrahigh incident photon-to-current conversion efficiency of ~90% in the UV region. A comparative study assesses the ultrahigh carrier density (~1021cm−3) and suitable bandgap of GaON relative to GaN and Ga2O3, revealing a higher photocurrent for the ZnO-GaON core-shell NWs. These encouraging results indicated that higher PEC performance is worthy expected upon optimization of the nitrogen and oxygen concentrations and by combining with narrow bandgap materials in further studies.
登录
查看更多内容
DOI：
10.1016/j.jphotochem.2010.06.032
发表时间：
2010-12
影响因子：
4.3
作者：
W. Xie;Yuanzhi Li;Wei Sun;Jichao Huang;Hao Xie;Xiujian Zhao
通讯作者：
W. Xie;Yuanzhi Li;Wei Sun;Jichao Huang;Hao Xie;Xiujian Zhao
影响因子：
4.6
作者：
Iqbal N;Khan I;Yamani ZH;Qurashi A
通讯作者：
Qurashi A
DOI：
10.1201/b19635
发表时间：
2016-02
期刊：
--
影响因子：
--
作者：
Yeping Wang;Jianhua Zhao
通讯作者：
Yeping Wang;Jianhua Zhao
影响因子：
3.7
作者：
G. Berdiyorov;A. Qurashi;G. Eshonqulov;F. El-Mellouhi
通讯作者：
G. Berdiyorov;A. Qurashi;G. Eshonqulov;F. El-Mellouhi
影响因子：
27.8
作者：
Ran, Jingrun;Qu, Jiangtao;Qiao, Shi-Zhang
通讯作者：
Qiao, Shi-Zhang