Characteristics of Very High-Aspect-Ratio Contact Hole Etching
Characteristics of Very High-Aspect-Ratio Contact Hole Etching
复制标题
极高深宽比接触孔蚀刻的特点
DOI：
10.1143/jjap.36.2470
复制
发表时间：
1997
影响因子：
1.5
通讯作者：
Jun Kanamori Horiike
中科院分区：
文献类型：
--
作者：
N. Ikegami;A. Yabata;T. Matsui;Jun Kanamori Horiike
利用多晶硅掩模和磁增强反应离子刻蚀(RIE)系统，在CHF3/CO混合气体中成功地制备了直径0.06µm、深度2µm的超大长径比SiO_2接触孔图案。在这个维度区域，垂直轮廓的加工非常困难，可能会出现孔的侧壁弯曲的问题。此外，当离子通过多晶硅掩模时，离子通量和能量可能显著降低，而不是通过二氧化硅空穴。弯曲与入射离子轨迹的弯曲有关，其中轨迹变化的第一阶段发生在掩模处，随后可能发生离子在空穴侧壁的多次散射。其他因素包括从多晶硅掩模和/或沉积的氟碳聚合物溅射的重新沉积的硅对侧壁的保护，以及离子能量和通量轰击这些沉积材料的影响。
An ultrahigh-aspect-ratio, 0.06-µ m-diameter, 2-µ m-deep contact hole pattern of SiO2 was successfully fabricated using a poly-Si mask and a magnetically enhanced reactive-ion-etching (RIE) system in a mixture of CHF3/CO gas. In this dimensional area, processing for vertical profiles is extremely difficult, and problems in the form of bowing at the sidewalls of the holes can occur. Furthermore, it is possible that ion flux and energy are significantly reduced when ions pass through the poly-Si mask, rather than through the SiO2 hole. The bowing is associated with bending of the incident ion trajectories, where the first stage of the trajectory change occurs at the mask, and subsequent multiple scattering of ions at the sidewall of the hole can occur. Other factors include sidewall protection by redeposited Si sputtered from the poly-Si mask and/or the deposited fluorocarbon polymers, and the effects of ion energy and flux bombarding these deposited materials.