Planar Hall effect in the Weyl semimetal GdPtBi
Planar Hall effect in the Weyl semimetal GdPtBi
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DOI：
10.1103/physrevb.98.041103
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发表时间：
2018-07-11
影响因子：
3.7
通讯作者：
Shekhar, Chandra
中科院分区：
文献类型：
--
作者：
Kumar, Nitesh;Guin, Satya N.;Shekhar, Chandra
最近Weyl和Dirac半金属的发现是凝聚态物理学最重要的进展之一。在为数不多的通过电输运来表征Weyl半金属的工具中，负磁电阻是最常用的。考虑到这种方法的缺点，需要新的工具来表征Weyl半金属中的手征反常。我们将平面霍尔效应(Phe)作为一种有效的技术应用于半Heusler Weyl半金属GdPtBi中，研究了手征反常现象。该化合物在2K和9T下表现出1.5m欧加厘米平面霍尔电阻率的大值。我们的分析表明，观测到的幅度主要受Berry曲率和手征反常贡献的影响。通过角度相关输运研究，我们确定了轨道磁阻相对较小的GdPtBi是观测大Phe的理想候选材料。
The recent discovery of Weyl and Dirac semimetals is one of the most important progresses in condensed matter physics. Among the very few available tools to characterize Weyl semimetals through electrical transport, negative magnetoresistance is most commonly used. Considering the shortcomings of this method, new tools to characterize the chiral anomaly in Weyl semimetals are desirable. We employ the planar Hall effect (PHE) as an effective technique in the half Heusler Weyl semimetal GdPtBi to study the chiral anomaly. This compound exhibits a large value of 1.5 m Omega cm planar Hall resistivity at 2 K and in 9 T. Our analysis reveals that the observed amplitude is dominated by Berry curvature and chiral anomaly contributions. Through angle-dependent transport studies we establish that GdPtBi with relatively small orbital magnetoresistance is an ideal candidate to observe the large PHE.