2D transistors rapidly printed from the crystalline oxide skin of molten indium
2D transistors rapidly printed from the crystalline oxide skin of molten indium
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DOI：
10.1038/s41699-022-00294-9
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发表时间：
2022-03-14
影响因子：
9.7
通讯作者：
Scheideler, William J.
中科院分区：
文献类型：
--
作者：
Hamlin, Andrew B.;Ye, Youxiong;Scheideler, William J.
透明金属氧化物的超薄单纳米通道为提高低功耗、多功能薄膜电子器件的性能提供了无与伦比的机会。在这里，我们报告了一个可扩展的和低温液态金属打印（LMP）的过程中解锁的二维（2D）的InOx的迁移率。这些连续的纳米片被快速地（60 cm s（-1））印刷在大面积（30 cm（2））上，直接从在熔融铟上自发形成的天然氧化物皮肤。这些纳米晶体LMP InOx膜表现出独特的2D晶粒形态，导致沉积时的优异导电性。量子限制和低温氧化退火后处理控制了2D InOx沟道的能带结构和电子态密度，产生了具有高迁移率（mu（0）= 67 cm（2）V（-1）s（-1））、优异的电流饱和和低滞后（温度低至165 ℃）的薄膜晶体管。这项工作确立了LMP 2D InOx作为高性能、大面积电子产品（如柔性显示器、有源插入器和薄膜传感器）的理想低温晶体管技术。
Ultrathin single-nm channels of transparent metal oxides offer unparalleled opportunities for boosting the performance of low power, multifunctional thin-film electronics. Here we report a scalable and low-temperature liquid metal printing (LMP) process for unlocking the ultrahigh mobility of 2-dimensional (2D) InOx. These continuous nanosheets are rapidly (60 cm s(-1)) printed over large areas (30 cm(2)) directly from the native oxide skin spontaneously formed on molten indium. These nanocrystalline LMP InOx films exhibit unique 2D grain morphologies leading to exceptional conductivity as deposited. Quantum confinement and low-temperature oxidative postannealing control the band structure and electronic density of states of the 2D InOx channels, yielding thin-film transistors with ultrahigh mobility (mu(0) = 67 cm(2) V(-1)s(-1)), excellent current saturation, and low hysteresis at temperatures down to 165 degrees C. This work establishes LMP 2D InOx as an ideal low-temperature transistor technology for high-performance, large area electronics such as flexible displays, active interposers, and thin-film sensors.