Surface diagnostics of dry etched III–V semiconductor samples using focused ion beam and secondary ion mass spectrometry
Surface diagnostics of dry etched III–V semiconductor samples using focused ion beam and secondary ion mass spectrometry
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使用聚焦离子束和二次离子质谱法对干法蚀刻 III-V 族半导体样品进行表面诊断
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
I. White
中科院分区：
文献类型：
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作者：
Siyuan Yu;P. Heard;B. Cakmak;R. Penty;I. White
为了优化InP的H2/CH 4反应离子刻蚀工艺，利用聚焦离子束和二次离子质谱分析了刻蚀样品的表面成分。氯和氧的有害物质已被确定为引起表面粗糙度和蚀刻速率波动。掩模表面上的聚合物分布和蚀刻表面磷丰度已被研究了各种气体混合物和射频功率，建立优化的富甲烷蚀刻条件下，表面P含量最接近未蚀刻的材料和聚合物沉积是可以接受的。
In order to optimize the H2/CH4 reactive ion etching process for InP, the surface composition of etched samples has been analyzed by means of a focused ion beam and secondary ion mass spectrometry. Harmful species of chlorine and oxygen have been identified as causing surface roughness and etch-rate fluctuations. Polymer distribution on the masked surface and etched surface phosphor abundance have been studied for various gas mixtures and rf power, establishing optimized CH4-rich etching conditions under which surface P content is closest to unetched material and polymer deposition is acceptable.