Silicon Micromachined Canonical E-Plane and H-Plane Bandpass Filters at the Terahertz Band
Silicon Micromachined Canonical E-Plane and H-Plane Bandpass Filters at the Terahertz Band
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DOI：
10.1109/lmwc.2013.2258097
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发表时间：
2013-06-01
影响因子：
3
通讯作者：
Rebollar, Jesus M.
中科院分区：
文献类型：
--
作者：
Leal-Sevillano, Carlos A.;Reck, Theodore J.;Rebollar, Jesus M.
本文介绍了几种工作在WR-1.5频段(500-750 GHz)的带通滤波器。滤光片的制作采用了深反应离子刻蚀(DRIE)硅微机械加工工艺。实现了基于E面和H面的两种正则滤波拓扑。这里介绍的工作有两个具体的目标：a)获得重要的制造工艺参数，如公差、垂直角、表面粗糙度和重复性；b)验证太赫兹波段波导滤波器的正确工作。这些滤波器没有任何调谐元件。实验结果表明，对于E面拓扑和H面拓扑，回波损耗分别优于10dB，插入损耗(对于6%的分数带宽)分别接近1和2.5dB。所得结果与2微米的加工公差和3度的垂直角偏差是一致的。
In this letter, several bandpass filters operating in the WR-1.5 band (500 to 750 GHz) are presented. The deep reactive ion etching (DRIE) silicon micromachining process is used for the fabrication of the filters. Two canonical filter topologies based on E- and H-plane are implemented. The work presented here has two specific objectives: a) to get important fabrication process parameters, such as tolerances, vertical angles, surface roughness, and repeatability and b) to validate the proper working of the waveguide filters in the terahertz band. These filters do not have any tuning element. Experimental results show better than 10 dB return loss and approximately 1 and 2.5 dB insertion loss (for 6% fractional bandwidth) for the E- and H-plane topology, respectively. The obtained results are in agreement with fabrication tolerances of 2 mu m and vertical angles deviations up to 3 degrees.