Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films
Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films
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DOI：
10.1063/1.4816811
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发表时间：
2013-05
期刊：
影响因子：
1.6
通讯作者：
G. V. Swamy;H. Pandey;A. Srivastava;M. Dalai;K. Maurya;Rashmi;R. Rakshit
中科院分区：
文献类型：
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作者：
G. V. Swamy;H. Pandey;A. Srivastava;M. Dalai;K. Maurya;Rashmi;R. Rakshit
本文报道了利用脉冲激光沉积技术在SiO2/Si（001）衬底上制备Co40Fe40B20 （CoFeB）薄膜的硼扩散和后续结晶过程。二次离子质谱分析表明硼在CoFeB的非晶相和晶相界面处均有扩散。高分辨率透射电镜显示，在CoFeB的非晶态基体中嵌入了少量纳米晶。然而，在400℃下退火导致沿（110）取向的bcc结构的CoFe结晶。as -沉积膜的矫顽力（Hc）为5Oe，为非金属，而400℃退火膜的矫顽力（Hc）为135Oe。
We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO2/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission electron microscopy reveals a small fraction of nano-crystallites embedded in the amorphous matrix of CoFeB. However, annealing at 400°C results in crystallization of CoFe with bcc structure along (110) orientation. As-deposited films are non-metallic in nature with the coercivity (Hc) of 5Oe while the films annealed at 400°C are metallic with a Hc of 135Oe.