Effect of simultaneous chemical substitution of A and B sites on the electronic structure of BiFeO3 films grown on BaTiO3/SiO2/Si substrate
Effect of simultaneous chemical substitution of A and B sites on the electronic structure of BiFeO3 films grown on BaTiO3/SiO2/Si substrate
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DOI：
10.1007/s10854-013-1069-6
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发表时间：
2013-01
期刊：
影响因子：
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通讯作者：
Kaveh Ahadi;A. Nemati;S. Mahdavi;Abolhassan Vaezi
中科院分区：
文献类型：
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作者：
Kaveh Ahadi;A. Nemati;S. Mahdavi;Abolhassan Vaezi
研究了脉冲激光沉积在BaTiO3/SiO2/Si衬底上生长Bi1−xCaxFe1−yMnyO3−δ的电学性能和电子结构。结果表明，Ca对BiFeO3晶体的对称性和电学性能有显著影响。另一方面，Mn对化合物的光学性质和能隙的影响更大。XPS结果表明，虽然Ca倾向于降低铁价态，但Mn倾向于稳定其在3+（至少在此浓度下）。在300 K下，不同浓度Ca和Mn的带隙为2.51 ~ 2.81 eV。紫外可见光谱还显示了2.2和2.4 eV的亚带隙缺陷跃迁。从粒子方法也被用于阐明金属-绝缘体跃迁的性质。
Electrical properties and electronic structure of Bi1−xCaxFe1−yMnyO3−δgrown by pulsed-laser deposition on BaTiO3/SiO2/Si substrate were investigated. Results showed that Ca has drastic effect on symmetry of crystal and electrical poperties of BiFeO3. On the other hand, Mn revealed to have more radical effect on optical properties and energy gap of the compound. XPS results represented that although Ca tend to decrease Fe valence state, Mn tends to stabilize it at 3+ (at least in this concentrations). UV–visible study yielded bandgap of 2.51–2.81 eV (at 300 K) for different concentrations of Ca and Mn. UV–visible spectra also revealed sub-bandgap defect transitions at 2.2 and 2.4 eV. Slave-particle approach has also been applied to elucidate nature of the metal–insulator transition.