Properties of Ba-ferrite/AlN double layered films for perpendicular magnetic recording media
Properties of Ba-ferrite/AlN double layered films for perpendicular magnetic recording media
复制标题
垂直磁记录介质用Ba-铁氧体/AlN双层薄膜的性能
DOI：
10.1016/s0304-8853(01)01230-6
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发表时间：
2002
影响因子：
2.7
通讯作者：
Y. Hong
中科院分区：
文献类型：
--
作者：
A. Morisako;T. Naka;Kentaro Ito;Ayumi Takizawa;M. Matsumoto;Y. Hong
本文介绍了近二十年来钡铁氧体（BaM）薄膜的研究进展。研究了BaM/AlN薄膜的磁性。具有AlN底层的BaM层的晶粒尺寸被抑制到50- 80 nm。由于Al的扩散，在BaM和AlN层之间形成了一层非磁性层，具有c轴取向的BaM/AlN薄膜在600°C左右的热膨胀系数为4.9kOe。
In this paper, research works on Ba-ferrite (BaM) thin films achieved during the last two decades have been introduced. Magnetic properties of BaM/AlN films were studied. Grain size of BaM layer with an AlN underlayer was suppressed to 50–80nm. A non-magnetic layer was formed between BaM and AlN layers due to the diffusion of Al. The HC⊥for BaM/AlN films with c-axis orientation was 4.9kOe at TSof about 600°C.