Thin-film formation of Si clathrates on Si wafers
Thin-film formation of Si clathrates on Si wafers
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Si 晶片上 Si 包合物的薄膜形成
DOI：
10.1016/j.jpcs.2013.12.009
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发表时间：
2014
影响因子：
4
通讯作者：
S. Nonomura
中科院分区：
文献类型：
--
作者：
F. Ohashi;Y. Iwai;A. Noguchi;Tomoya Sugiyama;M. Hattori;Takuya Ogura;R. Himeno;T. Kume;T. Ban;S. Nonomura
在本研究中，我们以单晶硅为衬底，制备了硅笼形薄膜（Na 8 Si 46和NaxSi 136）。通过在Ar气氛下将Na蒸气暴露于Si衬底，实现了Zintl相硅化钠的高度取向膜生长，所述硅化钠是Si笼形物的前体。随后在真空（<10 - 2 Pa）下在400 °C（3 h）下对NaSi膜进行热处理，得到具有几微米厚度的Si笼形物膜。此外，该技术使选择性生长的Na 8 Si 46和Na xSi 136使用适当的晶体取向的Si衬底。
In this study, we prepared Si clathrate films (Na8Si46and NaxSi136) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 °C (3 h) under vacuum (<10−2Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na8Si46and NaxSi136using the appropriate crystalline orientation of Si substrates.