High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
复制标题
通过射频等离子体辅助氮分子束外延生长的高速皮秒脉冲响应 GaNAsSb p-i-n 光电探测器
DOI：
--
复制
发表时间：
2007
期刊：
影响因子：
--
通讯作者：
D. Jäger
中科院分区：
文献类型：
--
作者：
K. Tan;S. Yoon;W. Loke;S. Wicaksono;K. L. Lew;A. Stohr;O. Ecin;A. Poloczek;A. Malcoci;D. Jäger
本文报道了用分子束外延技术结合射频等离子体辅助氮源生长的皮秒脉冲响应GaNAsSb闪烁GaAs p-i-n光电探测器。2μm厚的GaNAsSb光吸收层中含有3.3%的N和8%的Sb，其直流光响应波长可达1380 nm。0和−5V时的暗电流密度分别为1.6×10−5和13 A scincm 2。GaNAsSb光电二极管显示出仅为40.5ps（半峰全宽）的记录脉冲响应宽度，对应于4.5GHz带宽。
The authors report on picosecond pulse response GaNAsSb∕GaAs p-i-n photodetectors grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source. The 2μm thick GaNAsSb photoabsorption layer contains 3.3% of N and 8% of Sb resulting in a dc photoresponse up to 1380nm wavelength. Dark current densities at 0 and −5V are 1.6×10−5 and 13A∕cm2, respectively. The GaNAsSb photodiodes exhibit a record pulse response width of only 40.5ps (full width at half maximum) corresponding to a 4.5GHz bandwidth.