ZnSe Heterocrystalline Junctions Based on Zinc Blende-Wurtzite Polytypism
ZnSe Heterocrystalline Junctions Based on Zinc Blende-Wurtzite Polytypism
复制标题
基于闪锌矿-纤锌矿多型性的 ZnSe 异晶结
DOI：
10.1021/jp909182e
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发表时间：
2010-01-28
影响因子：
3.7
通讯作者：
Choy, Wallace C. H.
中科院分区：
文献类型：
--
作者：
Jin, Lei;Wang, Jianbo;Choy, Wallace C. H.
利用热蒸发过程中的压力变化成功地制备了ZnSe锌-纤锌矿（ZB-WZ）异质结，并利用电子显微镜技术进行了表征。利用平行束选区电子衍射结合极射投影技术，观察到两种类型的ZB-WZ结结构，并详细确定了它们的取向关系，分别表示为[11（1）over bar]（ZB）//[0001]（WZ）（I型）和+/-[111]（ZB）//[0001]（WZ）（II型）。利用会聚束电子衍射结合模拟也检测到了这种结两侧相对较弱的极性。与理论研究ZnSe（111）（ZB）-（0001）（WZ）界面所提出的理想模型不同，本文的研究结果表明，在ZnSe（甚至其它II-VI族半导体）的（111）（ZB）-（0001）（WZ）界面上存在极性反转，这可能导致界面附近的电荷积累。因此，它提供了一个有趣的真实的系统的理论研究，这种多型界面和所有合适的实验平台，进一步的电输运测量通过这些结。
ZnSe zinc blende-wurtzite (ZB-WZ) heterocrystalline junctions were successfully fabricated via pressure variation during the thermal evaporation process and characterized using electron microscopy techniques. Two types of ZB-WZ junction configurations were observed, and the orientation relationships, denoted as [11 (1) over bar](ZB)//[0001](WZ) (type I) and +/-[111](ZB)//[0001](WZ) (type II), respectively, were determined in detail by systematic parallel beam selected area electron diffraction combined with stereographic projections. The relatively weak polarities on both sides of such junctions were also detected using convergent beam electron diffraction combined with simulation. Different from the ideal models suggested by the theoretical studies on the (111)(ZB)-(0001)(WZ) interface of ZnSe (even other II-VI semiconductors), the present results indicate the existence of the polarity reversal across the junctions, which may result in charge accumulations around the interfaces. Therefore, it offers an interesting real system for theoretical investigation on such polytypic interface and also all appropriate experimental platform for further electrical transport measurement across these junctions.