Effects of electron concentration on the optical absorption edge of InN
Effects of electron concentration on the optical absorption edge of InN
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DOI：
10.1063/1.1704853
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发表时间：
2004-04-12
影响因子：
4
通讯作者：
Jakiela, R
中科院分区：
文献类型：
--
作者：
Wu, J;Walukiewicz, W;Jakiela, R
用光学吸收、霍尔效应和二次离子质谱研究了自由电子浓度在10（17）~ 10（20）cm ~（-3）范围内的InN薄膜。光吸收边覆盖从约0.7至约1.7eV的InN的本征带隙的宽能量范围，其接近于先前接受的InN的带隙。光吸收边能量的电子浓度依赖性完全占Burstein-Moss位移。二次离子质谱的测量结果表明，O和H杂质不能完全占在薄膜中的自由电子浓度。(C)2004年，美国物理学会。
InN films with free electron concentrations ranging from mid-10(17) to mid-10(20) cm(-3) have been studied using optical absorption, Hall effect, and secondary ion mass spectrometry. The optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap of InN. The electron concentration dependence of the optical absorption edge energy is fully accounted for by the Burstein-Moss shift. Results of secondary ion mass spectrometry measurements indicate that O and H impurities cannot fully account for the free electron concentration in the films. (C) 2004 American Institute of Physics.