[Ge(TenBu)4] - a single source precursor for the chemical vapour deposition of germanium telluride thin films.
[Ge(TenBu)4] - a single source precursor for the chemical vapour deposition of germanium telluride thin films.
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DOI：
10.1039/c8dt03263g
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发表时间：
2019-01
影响因子：
4
通讯作者：
Samantha L. Hawken;R. Huang;de Groot;A. Hector;M. Jura;W. Levason;G. Reid;Gavin B. G. Stenningc
中科院分区：
文献类型：
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作者：
Samantha L. Hawken;R. Huang;de Groot;A. Hector;M. Jura;W. Levason;G. Reid;Gavin B. G. Stenningc
对于制备碲酸锗(iv)化合物[Ge(TenBu) 4 ]，活化的锗与nBu 2 Te 2 在THF溶液中的反应比GeCl 4 与LiTenBu以1:4摩尔比在THF中的反应更有效。该产物通过 1H、13C{1H} NMR 光谱和微量分析进行了表征，并作为 GeTe 薄膜低压化学气相沉积的单源前驱体进行了评估。根据沉积条件，可以从纯前体获得暗灰色薄膜（主要是元素 Te）或高反射（GeTe）薄膜。掠入射 X 射线衍射表明，高反射薄膜由菱形 α-GeTe 相组成，而扫描电子显微镜和能量色散 X 射线分析表明，菱形微晶的 Ge 与 Te 的比例为 49(1) : 51(1)%。该结构也从拉曼光谱中得到证实。 Van der Pauw 测量显示 ρ = 3.2(1) × 10-4 Ω cm，霍尔电学测量表明 GeTe 薄膜为 p 型，迁移率为 8.4(7) cm2 V-1 s-1，载流子浓度为 2.5(2) × 1021 cm-3。高 p 型浓度很可能是其子晶格中存在大量 Ge 空位的结果，与 EDX 元素比率一致。
Reaction of activated germanium with nBu2Te2 in THF solution was shown to be more effective for the preparation of the germanium(iv) tellurolate compound, [Ge(TenBu)4], than reaction of GeCl4 with LiTenBu in a 1 : 4 molar ratio in THF. The product was characterised by 1H, 13C{1H} NMR spectroscopy and microanalysis and evaluated as a single source precursor for the low pressure chemical vapour deposition of GeTe thin films. Depending upon deposition conditions, either dull grey films (predominantly elemental Te) or highly reflective (GeTe) films were obtained from the pure precursor. Grazing incidence X-ray diffraction shows that the highly reflective films are comprised of the rhombohedral α-GeTe phase, while scanning electron microscopy and energy dispersive X-ray analysis reveal rhomb-shaped crystallites with a 49(1) : 51(1)% Ge : Te ratio. This structure is also confirmed from Raman spectra. Van der Pauw measurements show ρ = 3.2(1) × 10-4 Ω cm and Hall electrical measurements indicate that the GeTe thin films are p-type, with a mobility of 8.4(7) cm2 V-1 s-1 and carrier concentration of 2.5(2) × 1021 cm-3. The high p-type concentration is most likely a result of the substantial Ge vacancies in its sub-lattice, in line with the EDX elemental ratios.