Layered Topological Insulators and Semimetals for Magnetoresistance Type Sensors
Layered Topological Insulators and Semimetals for Magnetoresistance Type Sensors
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DOI：
10.1002/qute.201800039
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发表时间：
2018-12
影响因子：
4.4
通讯作者：
Minhao Zhang;Xuefeng Wang;F. Song;Rong Zhang
中科院分区：
文献类型：
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作者：
Minhao Zhang;Xuefeng Wang;F. Song;Rong Zhang
磁阻(MR)型传感器是一种传感器，可以根据施加的磁场灵敏地改变其电阻。近年来，拓扑量子材料因其新颖的磁流变效应而在传感器领域引起了越来越多的关注。本文简要介绍了层状三维拓扑绝缘体和拓扑半金属中的磁流变效应。MR效应包括极大的非饱和MR、巨大的各向异性MR和独特的类自旋阀MR。大的MR比、高的MR各向异性和低的1/f噪声使传感器在广泛的温度和磁场范围内具有高灵敏度。层状拓扑量子材料具有优异的磁流变性能和结构灵活性，有望为新一代磁传感器的应用提供理想的平台。
Magnetoresistance (MR) type sensors are transducers that can vary their resistances sensitively in response to an applied magnetic field. Recently, topological quantum materials have drawn the increased attention for sensor applications due to their novel MR effects. Here, a range of MR effects occurring in the layered 3D topological insulators and topological semimetals are briefly reviewed. The MR effects include the extremely large nonsaturating MR, the giant anisotropic MR, and the unique spin‐valve‐like MR. The large MR ratios, the high MR anisotropy, and the low 1/f noise allow sensors to have the high sensitivity over a wide range of temperatures and magnetic fields. It is anticipated that the layered topological quantum materials with their excellent MR performance and structural flexibility would provide an ideal platform for new‐generation magnetic sensor applications.