Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers
Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers
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DOI：
10.1143/jjap.50.101002
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发表时间：
2011-10-01
影响因子：
1.5
通讯作者：
Mishra, Umesh K.
中科院分区：
文献类型：
--
作者：
Chowdhury, Srabanti;Swenson, Brian L.;Mishra, Umesh K.
Mg离子注入GaN层向金属有机化学气相沉积（MOCVD）再生的AlGaN/GaN层扩散是依赖于Mg注入层的器件的一个关键问题。与掺杂Mg的GaN不同，在再生之前进行的表面处理以蚀刻掉富Mg层是无益的。值得注意的是，在Mg注入的GaN上再生亚纳米厚（7埃）的AlN层可以有效地阻止Mg扩散到1160℃下生长的AlGaN/GaN层中。这一点得到了二次离子质谱（SIMS）分析和电（电容电压）数据的验证。这一结果意义重大，因为在这样的厚度下，AlN不会影响过度生长材料的晶体质量，并且可以作为通过MOCVD生长技术实现电流阻塞结构的可行方法。(C) 2011日本应用学会
Diffusion of Mg from Mg-ion-implanted GaN layer to metalorganic chemical vapor deposition (MOCVD) regrown AlGaN/GaN layers was detected and identified as a critical problem in devices which are dependent on layers implanted with Mg for its current blocking properties. Surface treatments done to etch away the Mg rich layer prior to the regrowth was not beneficial unlike in the case of the GaN doped with Mg. Remarkably, regrowth of a sub-nanometer thick (7 angstrom) AlN layer on top of the Mg-implanted GaN was found to be effective in arresting the Mg from diffusing out into the AlGaN/GaN layers grown on top at 1160 degrees C. This was verified from both secondary ion mass spectrometry (SIMS) analysis and electrical (capacitance-voltage) data. This result is significant because at such thickness the AlN would not impact the crystal quality of the overgrown material and serve as a viable method of achieving a current blocking structure by MOCVD growth technique. (C) 2011 The Japan Society of Applied