Robust room temperature ferromagnetism in Cu doped ZnO thin films
Robust room temperature ferromagnetism in Cu doped ZnO thin films
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DOI：
10.1063/1.3615714
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发表时间：
2011-07-25
影响因子：
4
通讯作者：
Ghosh, Subhasis
中科院分区：
文献类型：
--
作者：
Khan, Zaheer Ahmed;Ghosh, Subhasis
报道了用磁控溅射法制备高质量Cu掺杂ZnO薄膜的研究。在较高的生长温度下实现了高水平的Cu掺杂。在没有生长后退火的薄膜中观察到室温铁磁性，磁矩随着Cu含量的增加而先增加后减少。观察到的铁磁性是稳健的，退火后不会消失。(C)2011年美国物理学会。[doi：10.1063/1.3615714]
We report the growth of high quality Cu doped ZnO thin films by magnetron sputtering. High level of Cu doping has been achieved at higher growth temperature. Room temperature ferromagnetism, with magnetic moment initially increasing and then decreasing with Cu content, has been observed in the thin film without post growth annealing. Observed ferromagnetism is robust and does not disappear upon annealing. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615714]