Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
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DOI：
10.1016/j.tsf.2012.11.125
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发表时间：
2013-04-30
期刊：
影响因子：
2.1
通讯作者：
Mikolajick, Thomas
中科院分区：
文献类型：
--
作者：
Yurchuk, Ekaterina;Mueller, Johannes;Mikolajick, Thomas
使用金属-绝缘体-金属电容器结构研究了硅掺杂氧化铪的铁电行为，膜厚度为9和27 nm，退火温度为450和1000 ℃，硅含量为0至8.5催化%。对于9 nm厚的薄膜，铁电反射极化的改善，揭示了减少硅含量和提高退火温度，这对应于以及通过X射线衍射观察到的HfO 2结构相。薄膜厚度增加到27 nm时，反射极化明显降低，并改变了薄膜的温度依赖性。这种铁电性能的变化被证明是由不同的结晶行为的厚膜相对于薄膜。(C)2012爱思唯尔有限公司版权所有。
The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal-insulator-metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures between 450 and 1000 degrees C and silicon contents from 0 to 8.5 cat%. For the 9 nm thick films, an improvement of the ferroelectric remanent polarization was revealed for decreasing silicon content and increasing annealing temperature, which corresponds well with the HfO2 structural phases observed by x-ray diffraction. An increase of the film thickness up to 27 nm induced an apparent decrease of the remanent polarization and modified the temperature dependence. This change in the ferroelectric properties was shown to be determined by the different crystallization behaviour of the thick films with respect to the thin films. (C) 2012 Elsevier B.V. All rights reserved.