Analysis of Tunable Internal Loss Caused by Franz–Keldysh Absorption in Transistor Lasers
Analysis of Tunable Internal Loss Caused by Franz–Keldysh Absorption in Transistor Lasers
复制标题
晶体管激光器弗朗茨-凯尔迪什吸收引起的可调谐内部损耗分析
DOI：
10.1109/jstqe.2015.2438814
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发表时间：
2015
影响因子：
4.9
通讯作者：
C. Wu
中科院分区：
文献类型：
--
作者：
Hsiao;Yu;Gong;Shu‐Wei Chang;C. Wu
晶体管激光器(TL)基极-集电极结处的Franz-Keldysh(FK)吸收是不可避免的，因为存在反向偏置。因此，偏置条件在确定热释光的内部损耗中起着至关重要的作用。在本研究中，研究了边发射TLS的不同小面涂层对FK吸收影响的内损耗(αINT)的影响。对这些热释光在不同温度下的电学和光学特性进行了实验分析。然后，从不同偏置电压下不同涂层器件的光-电流曲线中提取其α-INT。我们证明了由FK吸收引起的内部损耗是偏置相关的，因此是可调的。相比之下，腔内的强场在两个面上都有高反射涂层，可能会饱和FK吸收，使其较难控制偏置。
The Franz-Keldysh (FK) absorption at the base-collector junction of a transistor laser (TL) is inevitable because of the reverse bias therein. The bias condition, thus, plays a crucial role in the determination of internal loss of TLs. In this study, effects from various facet coatings of edge-emitting TLs on the internal loss(αint), which is influenced by the FK absorption, are investigated. Experimental analyses on the electrical and optical characteristics of these TLs at various temperatures are presented. The αint of different coated devices at various bias voltages are then extracted from their light-versus-current curves. We demonstrate that the internal loss resulted from the FK absorption is bias dependent, and therefore tunable. By contrast, the intense field inside the cavity with highly reflective coatings on both facets may saturate the FK absorption and make it less bias controllable.