Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields
Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields
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DOI：
10.1021/acs.nanolett.6b05318
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发表时间：
2017-05-01
期刊：
影响因子：
10.8
通讯作者：
Ihn, Thomas
中科院分区：
文献类型：
--
作者：
Overweg, Hiske;Eggimann, Hannah;Ihn, Thomas
我们报道了在石墨烯p - n结中观察到的磁阻振荡。在由单层和双层石墨烯组成的六个样品中都观察到了这种振荡，并且在温度高达30K时仍然存在，而在这个温度下标准的舒布尼科夫 - 德哈斯振荡已无法分辨。这种振荡磁阻可以通过紧束缚模拟重现。我们将这种现象归因于n区和p区中态密度的调制。
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.