Growth mechanism, photoluminescence, and field-emission properties of ZnO nanoneedle arrays.
Growth mechanism, photoluminescence, and field-emission properties of ZnO nanoneedle arrays.
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DOI：
10.1021/jp0568632
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发表时间：
2006-04
期刊：
影响因子：
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通讯作者：
Zengxing Zhang;Huajun Yuan;Jianjun Zhou;Dongfang Liu;S. Luo;Y. Miao;Yan Gao;Jianxiong Wang
中科院分区：
文献类型：
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作者：
Zengxing Zhang;Huajun Yuan;Jianjun Zhou;Dongfang Liu;S. Luo;Y. Miao;Yan Gao;Jianxiong Wang
采用化学气相沉积法在680℃下大规模生长ZnO纳米针阵列，以锌粉和O(2)气为原料，无催化剂硅片为衬底。能量色散x射线和x射线衍射分析表明，纳米针几乎是纯ZnO，并且优先排列在纤锌矿结构的c轴方向。从热力学的角度分析了ZnO纳米针阵列的生长机理，认为是表面张力和扩散共同作用的结果。生长产物的光致发光光谱显示出以484 nm为中心的强发射带，这是由氧空位引起的。场发射测试表明，ZnO纳米针阵列的导通电压约为5.3 V/微米。
ZnO nanoneedle arrays have been grown on a large scale with a chemical vapor deposition method at 680 degrees C. Zn powder and O(2) gas are employed as source materials, and catalyst-free Si plates are used as substrates. Energy-dispersive X-ray and X-ray diffraction analyses show that the nanoneedles are almost pure ZnO and preferentially aligned in the c-axis direction of the wurtzite structure. The growth mechanism of ZnO nanoneedle arrays is discussed with the thermodynamic theory and concluded to be the result of the co-effect of the surface tension and diffusion. Photoluminescence spectrum of the as-grown products shows a strong emission band centering at about 484 nm, which originates from oxygen vacancies. Field-emission examination exhibits that the ZnO nanoneedle arrays have a turn-on voltage at about 5.3 V/microm.