Modeling of NBTI degradation and its impact on electric field dependence of the lifetime
Modeling of NBTI degradation and its impact on electric field dependence of the lifetime
复制标题
NBTI 退化建模及其对寿命电场依赖性的影响
DOI：
10.1109/relphy.2004.1315296
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
K. Kubota
中科院分区：
文献类型：
--
作者：
H. Aono;E. Murakami;K. Okuyama;A. Nishida;M. Minami;Y. Ooji;K. Kubota
研究了不同应力栅压和温度下p-MOSFET的负偏压温度不稳定性。结果表明，退化趋于饱和，寿命与电场(EOX)的关系可表示为EOX的幂规律。我们提出了新的经验模型和动力学模型。用幂定律描述的寿命对EOX的依赖关系是从我们描述退化饱和的经验模型推导出来的。此外，我们的动力学模型解释了饱和行为。
Negative Bias Temperature Instability of p-MOSFETs is investigated under various stress gate voltages and temperatures. It is shown that degradation tends to saturate and the dependence of lifetime on electric field (Eox) is expressed as a power-law of Eox. We propose new empirical and kinetic models. The Eox dependence of the lifetime described by the power-law is derived from our empirical model describing the saturation of degradation. Moreover, our kinetic model explains the saturation behavior.