SrTiO3 on piezoelectric PMN-PT(001) for application of variable strain
SrTiO3 on piezoelectric PMN-PT(001) for application of variable strain
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DOI：
10.1063/1.2975167
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发表时间：
2008-09-01
影响因子：
3.2
通讯作者：
Doerr, K.
中科院分区：
文献类型：
--
作者：
Bilani-Zeneli, O.;Rata, A. D.;Doerr, K.
SrTiO 3（STO）是复合氧化物薄膜最常用的衬底材料。在这项工作中，STO作为缓冲层的压电赝立方Pb（Mg 1/3 Nb 2/3）（0.72）Ti 0.28 O3（001）（PMN-PT）基板，这是可逆应变薄膜探索。STO缓冲层降低了面内晶格参数，并允许与更宽范围的薄膜材料进行更好的晶格匹配。STO薄膜（30 nm）已生长与PMN-PT的面内晶格参数接近的体STO的外延取向。衬底的菱面体域结构已通过原子力显微镜成像。用压电响应力显微镜研究了相关的铁电畴结构。在畴内，STO以相当低的粗糙度（rms <0.2nm）生长。利用X射线衍射研究了压电衬底应变向STO膜的转移及其随外加电场的变化。电阻的应变依赖性测量的铁磁锰氧化物薄膜上生长的STO。两个实验都定性地证实了STO缓冲液将衬底应变转移到沉积在顶部的功能膜中。(C)2008年美国物理学会。
SrTiO3 (STO) is the most frequently used substrate material for complex oxide films. In this work, STO is explored as a buffer layer on piezoelectric pseudocubic Pb(Mg1/3Nb2/3)(0.72)Ti0.28O3(001) (PMN-PT) substrates, which serve to reversibly strain thin films. The STO buffer layer reduces the in-plane lattice parameter and allows for a better lattice matching to a broader range of thin film materials. STO films (30 nm) have been grown with epitaxial orientation on PMN-PT with an in-plane lattice parameter close to that of bulk STO. The substrate's rhombohedral domain structure has been imaged by atomic force microscopy. The related ferroelectric domain structure has been investigated by piezoresponse force microscopy. Within a domain, STO grows with a rather low roughness (rms < 0.2 nm). The transfer of the piezoelectric substrate strain to the STO film and its variation with an applied electric field are studied using x-ray diffraction. The strain dependence of the electrical resistance is measured for a ferromagnetic manganite film grown on top of the STO. Both experiments confirm qualitatively that the STO buffer transfers the substrate strain into a functional film deposited on top. (C) 2008 American Institute of Physics.