Effects of Initial Conditions and Circuit Parameters on the SBT-Memristor-Based Chaotic Circuit
Effects of Initial Conditions and Circuit Parameters on the SBT-Memristor-Based Chaotic Circuit
复制标题
初始条件和电路参数对SBT忆阻器混沌电路的影响
DOI：
10.1142/s0218127419501712
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发表时间：
2019-11-01
影响因子：
2.2
通讯作者：
Li, Yuxia
中科院分区：
文献类型：
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作者：
Dou, Gang;Duan, Huaying;Li, Yuxia
本文研究了磁通控制模型描述的基于四阶 SBT 忆阻器的混沌系统。分析了混沌系统的稳定性，并利用Lyapunov指数谱、分岔图、相轨道和庞加莱图的数学方法讨论了初始条件和电路参数对基于SBT忆阻器的混沌电路的影响。通过仿真，可以观察到动态特性随初始状态和电路参数的变化而变化。在基于 SBT 忆阻器的系统中可以发现稳定点、周期循环和混沌等复杂的动态行为。还发现系统表现出多稳定性，这与 SBT 忆阻器的初始状态密切相关。这项研究为基于忆阻器的电路的设计和分析以实现潜在的实际应用提供了富有洞察力的指导。
In the paper, a fourth-order SBT-memristor-based chaotic system described by the flux-controlled model is investigated. The stability of the chaotic system is analyzed, and the effects of initial conditions and circuit parameters on the SBT-memristor-based chaotic circuit are discussed by mathematical methods of Lyapunov exponents spectra, bifurcation diagrams, phase orbits and Poincaré maps. Through simulations, it is observed that the dynamical characteristics vary with initial states and circuit parameters. Complex dynamical behaviors such as stable points, period cycles and chaos can be found in the SBT-memristor-based system. It is also found that the system exhibits multistability, which is closely dependent on the initial state of the SBT memristor. This study provides insightful guidance for the design and analysis of memristor-based circuits towards potential real applications.