Current-induced switching of thin film α−Fe2O3 devices imaged using a scanning single-spin microscope
Current-induced switching of thin film α−Fe2O3 devices imaged using a scanning single-spin microscope
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使用扫描单旋转显微镜成像的薄膜αFe2O3器件的电流感应开关
DOI：
10.1103/physrevmaterials.7.064402
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发表时间：
2023
影响因子：
3.4
通讯作者：
Fuchs, Gregory D.
中科院分区：
文献类型：
--
作者：
Guo, Qiaochu;D'Addario, Anthony;Cheng, Yang;Kline, Jeremy;Gray, Isaiah;Cheung, Hil Fung;Yang, Fengyuan;Nowack, Katja C.;Fuchs, Gregory D.
反铁磁绝缘体中nsamel顺序的电开关是存储器应用的基础。与通过自旋轨道转矩驱动铁磁有序的电开关不同，反铁磁有序的电开关仍然知之甚少。本文利用金刚石氮空位中心扫描显微镜研究了30nm厚、轴向dhall器件的低场磁性能。利用其nsamel矢量上的倾斜力矩作为磁柄，我们在低磁场下放松状态之前，施加饱和面内磁场来创建已知的初始状态，以进行磁成像。对于初始化字段的不同平面内方向，我们重复此过程。我们发现磁场图像具有更强的磁场纹理，这表明尽管预期的3倍磁晶各向异性，但外膜具有整体的平面内单轴各向异性。我们还研究了磁序的电流感应开关。我们发现开关器件的比例取决于相对于初始化场的电流脉冲持续时间、幅度和方向。
Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30-nm-thick,-axis-orientedHall devices using a diamond nitrogen-vacancy center scanning microscope. Using the canted moment ofas a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. We repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields alongand, suggesting that despite the expected 3-fold magnetocrystalline anisotropy, ourthin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in. We find that the fraction of the device that switches depends on the current pulse duration, amplitude, and direction relative to the initialization field.