Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering
Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering
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通过内部吸杂增强多晶硅片劣化区域的性能
DOI：
10.1002/pip.2391
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
L. Arnberg
中科院分区：
文献类型：
--
作者：
Y. Boulfrad;A. Haarahiltunen;H. Savin;E. Øvrelid;L. Arnberg
通过定向凝固生长的多晶硅（mc-Si）锭的劣化区域（通常称为红区）通常在晶片化之前被去除。该区域的特征在于少子寿命差，位于mc-Si锭的侧面、顶部和底部。在这项研究中，氧沉淀和结构缺陷的内部吸杂的效果进行了研究的底部区域的mc-Si锭。研究了氧沉淀的形核、生长及低温退火。通过μ-PCD进行的光致发光成像、寿命绘图和间隙铁测量显示底部红区显著减少。实验结果表明，该材料的寿命从1 μs以下提高到20 μs左右，间隙铁浓度从1.32 × 10 ~（13）at/cm ~ 3降低到8.4 × 10 ~（10）at/cm ~ 3。版权所有© 2013约翰威利父子有限公司.
The deteriorated area of the multicrystalline silicon (mc‐Si) ingots grown by directional solidification, commonly known as the Red Zone, is usually removed before wafering. This area, characterized by poor minority carrier lifetime, is located on the sides, at the top, and the bottom of the mc‐Si ingots. In this study, the effect of internal gettering by oxygen precipitates and structural defects has been investigated on the bottom zone of a mc‐Si ingot. Nucleation and growth of oxygen precipitates as well as low temperature annealing were studied. Photoluminescence imaging, lifetime mapping, and interstitial iron measurements performed by μ‐PCD reveal a considerable reduction of the bottom Red Zone. An improvement of lifetime from below 1 µs to about 20 µs and a reduction of interstitial iron concentration from 1.32 × 1013 at/cm3 to 8.4 × 1010 at/cm3 are demonstrated in this paper. Copyright © 2013 John Wiley & Sons, Ltd.