Y.Takeda: "Effects of growth process on GaInP/GaAs/GaInP heterointerface structures and device characteristics revealed by X-ray CTR scattering measurements"Transactions of the Materials Research Society of Japan. 28巻. 11-14 (2003)
Y.Takeda: "Effects of growth process on GaInP/GaAs/GaInP heterointerface structures and device characteristics revealed by X-ray CTR scattering measurements"Transactions of the Materials Research Society of Japan. 28巻. 11-14 (2003)
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Y.Takeda：“通过 X 射线 CTR 散射测量揭示生长过程对 GaInP/GaAs/GaInP 异质界面结构和器件特性的影响”，日本材料研究会卷 28. 11-14 (2003)。
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