Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization
Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization
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DOI：
10.1103/physrevapplied.16.054008
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发表时间：
2021-11
影响因子：
4.6
通讯作者：
E. Brown;W.-D. Zhang;T. A. Growden;P. Fakhimi;P. R. Berger
中科院分区：
文献类型：
--
作者：
E. Brown;W.-D. Zhang;T. A. Growden;P. Fakhimi;P. R. Berger
