Geometry dependence of CMOS-compatible, polysilicon, leaky-mode photodetectors
Geometry dependence of CMOS-compatible, polysilicon, leaky-mode photodetectors
复制标题
DOI：
10.1109/lpt.2007.893573
复制
发表时间：
2007-03-01
影响因子：
2.6
通讯作者：
Lear, Kevin L.
中科院分区：
文献类型：
--
作者：
Pownall, Robert;Yuan, Guangwei;Lear, Kevin L.
互补金属-氧化物-半导体兼容的金属-半导体、导体-金属多晶硅光电二极管采用0.35 μ m商用技术制造，在654 nm处的响应度估计可达0.35 A/W。有效吸收系数为0.63 dB/μ m的提取5- 10 μ m长的波导耦合探测器的响应。在较小的，接触间距增加的响应表示两部分的光电流响应，与二次光电流占主导地位，在小接触间距和高电场。
Complementary metal-oxide-semiconductorcompatible metal-semi,conductor-metal polysilicon photodiodes fabricated in a commercial 0.35-mu m technology offer estimated responsivities of up to 0.35 A/W at 654 nm. An effective absorption coefficient of 0.63 dB/mu m was extracted from responsivities for 5- to 10-mu m-long waveguide-coupled detectors. Increasing responsivity at smaller,contact spacing indicated a two-part photocurrent response, with secondary photocurrent dominating at small contact spacings and high electric fields.