COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES
COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES
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DOI：
10.1109/16.199372
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发表时间：
1993-03-01
影响因子：
3.1
通讯作者：
BALIGA, BJ
中科院分区：
文献类型：
--
作者：
BHATNAGAR, M;BALIGA, BJ
本文定义了基于6H和3c sic的肖特基整流器和功率MOSFET的漂移区特性，以实现50至5000 V的击穿电压。利用这些值，计算了器件的输出特性，并与硅器件的特性进行了比较。研究发现，由于极低的漂移区电阻，5000-V SiC肖特基整流器和功率MOSFET在室温下可以提供100 A/cm2的导通电流密度，正向下降分别仅为3.85 V和2.95 V。这些值甚至优于硅P-i-N整流器和栅极关断晶闸管。由于没有少数载流子注入，这两种SiC器件都有望具有出色的开关特性和坚固性。此外，基于峰值结温度限制的热分析，由封装考虑因素确定，被提出。利用这一分析，ft发现5000-V， 6H-和3C-SiC MOSFET和肖特基整流器将比相应的Si器件小大约20和18倍。SiC的热分析表明，与传统的Si器件相比，这些器件可以在更高的温度和更高的击穿电压下工作。此外，在模具尺寸的显著减少是预期的。模具尺寸的减小将抵消材料成本的增加。本文的分析结果为着手SiC功率器件的制造提供了强有力的推动力。
This paper defines the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFET's to achieve breakdown voltages ranging from 50 to 5000 V. Using these values, the output characteristics of the devices have been calculated and these are compared with the characteristics of Si devices. It is found that due to very low drift region resistance, 5000-V SiC Schottky rectifiers and power MOSFET's can deliver on-state current density of 100 A/cm2 at room temperature with a forward drop of only 3.85 and 2.95 V, respectively. These values are superior to even that for silicon P-i-N rectifiers and gate turn-off thyristors. Both these SiC devices are expected to have excellent switching characteristics and ruggedness due to the absence of minority-carrier injection. Additionally, a thermal analysis based upon a peak junction temperature limit, as determined by packaging considerations, is presented. Using this analysis, ft is found that 5000-V, 6H-, and 3C-SiC MOSFET's and Schottky rectifiers would be approximately 20 and 18 times smaller than corresponding Si devices. This thermal analysis for the SiC indicates that these devices would allow operation at higher temperatures and at higher breakdown voltages than conventional Si devices. Also, a significant reduction in the die size is expected. This reduction in the die size would offset the higher cost of the material. The results of the analysis presented in this paper provide a strong impetus to embarking upon the fabrication of SiC power devices.