In situ process evaluation during hydrogen plasma etching of a-Si:H films by microwave detected transient photoconductivity measurements
In situ process evaluation during hydrogen plasma etching of a-Si:H films by microwave detected transient photoconductivity measurements
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通过微波检测瞬态光电导测量对 a-Si:H 薄膜进行氢等离子体蚀刻期间的原位工艺评估
DOI：
10.1063/1.353988
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发表时间：
1993
影响因子：
3.2
通讯作者：
M. Kunst
中科院分区：
文献类型：
--
作者：
H. Neitzert;W. Hirsch;M. Kunst
在氢等离子体干法刻蚀晶体硅基片上的非晶硅薄膜过程中，通过测量激光脉冲照射后微波反射的变化，跟踪了移动的过剩载流子的动力学。根据所测量的瞬态信号的幅度，可以确定剩余非晶硅膜的厚度，并且纳秒时间范围内的衰减产生关于衬底表面的缺陷密度的信息。显示了等离子体工艺对表面复合的影响，并给出了从覆盖有SiO2层的晶体硅中去除a-Si：H的情况下的终点检测标准。
During removal of amorphous silicon films deposited on crystalline silicon substrates by dry etching in a hydrogen plasma the kinetics of mobile excess charge carriers have been followed by measuring the change of the microwave reflection after laser pulse illumination. Following the amplitude of the measured transient signals the thickness of the remaining amorphous silicon film can be determined and the decay in the nanosecond time range yields information about the defect density of the substrate surface. The impact of the plasma process on the surface recombination is shown and a criterion for endpoint detection is given in the case of a‐Si:H removal from crystalline silicon covered with a SiO2 layer.