Ultraviolet laser removal of small metallic particles from silicon wafers
Ultraviolet laser removal of small metallic particles from silicon wafers
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DOI：
10.1016/s0143-8166(02)00022-2
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发表时间：
2002-12-01
影响因子：
4.6
通讯作者：
Watkins, KG
中科院分区：
文献类型：
--
作者：
Curran, C;Lee, JM;Watkins, KG
利用Nd:YAG谐波产生的266nm紫外辐射，激光去除硅片表面1微米大小的铜、金和钨颗粒。成功地从表面去除了铜和金颗粒，而钨颗粒被证明是难以去除的。清洗效率随激光能量的增加而提高。通过测量硅衬底上的损伤阈值激光辐照量和完全去除颗粒所需的辐照量，确定了安全清洗表面而不损伤衬底的最佳加工窗口。通过考虑颗粒在表面的附着力和三种不同颗粒的激光诱导清洗力，讨论了不同颗粒类型的清洗效率差异。(C) 2002 Elsevier Science Ltd.版权所有。
Laser removal of small 1 mum sized copper, gold and tungsten particles from silicon wafer surfaces was carried out using ultraviolet radiation at 266 nm generated by Nd:YAG harmonic generation. Successful removal of both copper and gold particles from the surface was achieved whereas tungsten particles proved to be difficult to remove. The cleaning efficiency was increased with an increase of laser fluence. The optimum processing window for safe cleaning of the surface without any substrate damage was determined by measuring the damage threshold laser fluence on the silicon substrate and the required fluence for complete removal of the particles. The different cleaning efficiencies with particle type are discussed by considering the adhesion force of the particle on the surface and the laser-induced cleaning force for the three different particles. (C) 2002 Elsevier Science Ltd. All rights reserved.