Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions
Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions
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DOI：
10.1088/1674-1056/23/11/116102
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发表时间：
2014-09
影响因子：
1.7
通讯作者：
Shi Li-Yang;Shen Bo;Yang Jianchang;Wang Junxi;Wang Ping
中科院分区：
文献类型：
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作者：
Shi Li-Yang;Shen Bo;Yang Jianchang;Wang Junxi;Wang Ping
利用高温深能级瞬态谱（HT-DLTS）和其他电学测量技术，研究了不同Al组分（x = 0，0.14，0.24，0.33和0.43）的n型AlxGa 1 −xN外延薄膜中的局域深能级。研究发现，在AlxGa 1 −xN薄膜中存在三个不同的深能级，其相对于导带的能级位置随着Al组分的增加而增加。激活能在导带以下1.0 eV以下的主要缺陷能级与费米能级稳定能密切相关，表明其起源可能与缺陷复合物有关，包括AlxGa 1 −xN薄膜中的反位缺陷和双空位。
By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type AlxGa1−xN epitaxial films with various Al compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in AlxGa1−xN films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1−xN films.