Cyan-emitting BaZrSi3O9:Eu2+phosphors for near-UV based white light-emitting diodes
Cyan-emitting BaZrSi3O9:Eu2+phosphors for near-UV based white light-emitting diodes
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DOI：
10.1016/j.matlet.2016.03.011
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发表时间：
2016-06
影响因子：
3
通讯作者：
J. Y. Park;K. Shim;J. Yu;H. Yang
中科院分区：
文献类型：
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作者：
J. Y. Park;K. Shim;J. Yu;H. Yang
A series of Eu2+ions doped BaZrSi3O9phosphors were synthesized by a solvothermal reaction method. The X-ray diffraction patterns of BaZrSi3O9:Eu2+phosphors confirmed their hexagonal structure after the samples were sintered above 1300 °C. The photoluminescence properties of BaZrSi3O9:Eu2+phosphors were explored by measuring the excitation and emission spectra, and decay curves. The excitation spectra of BaZrSi3O9:Eu2+phosphors consist of broad bands in the ultraviolet (UV) region due to 4f8→4f75d1transition of Eu2+ions. The sintering temperature and Eu2+ion concentration of BaZrSi3O9:Eu2+phosphors were optimized based on the dominant cyan emission intensity under the near-UV excitation. The optimum doping concentration of Eu2+ions was 3 mol% and the critical distance was calculated to be 23.245 Å. These luminescent powders are expected to be a potential candidate for solid-state lighting based white light-emitting diodes and optical display systems.
