Photoemission spectroscopy study of the Al/SiC interface
Photoemission spectroscopy study of the Al/SiC interface
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DOI：
10.1063/1.337405
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发表时间：
1986-07
影响因子：
3.2
通讯作者：
L. Porte
中科院分区：
文献类型：
--
作者：
L. Porte
用X射线和紫外光电子能谱研究了α-碳化硅晶体上沉积的几个纳米厚度的铝层随退火温度的变化。600℃以上的退火导致金属Al在晶体表面完全消失，Al渗入块体，并形成碳化铝。360℃热处理后的紫外光电子能谱可以用界面反应的开始来解释。然而，没有明确的实验证据表明反应发生在如此低的温度下。
Aluminum layers of some nanometers thickness have been deposited onto α‐SiC crystals and studied by x‐ray and ultraviolet photoelectron spectroscopies as a function of annealing temperature. Annealing beyond 600 °C induces a complete disappearance of metallic Al on the crystal surface, penetration of Al into the bulk, and formation of aluminum carbide. Ultraviolet photoemission spectra recorded after annealing at 360 °C could be explained by a beginning of interfacial reaction. However, there is no clear experimental evidence that reaction occurs at such a low temperature.