Band-edge photoluminescence in nanocrystalline ZnO:In films prepared by electrostatic spray deposition
Band-edge photoluminescence in nanocrystalline ZnO:In films prepared by electrostatic spray deposition
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DOI：
10.1016/j.apsusc.2005.04.011
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发表时间：
2006-02
影响因子：
6.7
通讯作者：
D. H. Chi;L. Binh;N. Binh;Lê Duy Khánh;Nguyen Ngoc Long
中科院分区：
文献类型：
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作者：
D. H. Chi;L. Binh;N. Binh;Lê Duy Khánh;Nguyen Ngoc Long
采用静电喷雾沉积技术成功地制备了ZnO：In薄膜。X射线衍射结果表明，薄膜为六方纤锌矿结构，晶胞参数为a=3.267 ？，c=5.209 ？在11.6-300 K的温度范围内研究了薄膜的光致发光特性，在整个温度范围内显示出很强的发光特性。结果表明，In掺杂氧化锌薄膜在低温下的紫外光发射是由中性施主束缚激子(D∘X)的发射和施主-受主对的复合引起的，而室温下的紫外光发射是由束缚在施主上的电子辐射跃迁到价带的。
ZnO:In films are successfully prepared by using the electrostatic spray deposition technique. X-ray diffraction indicates that the ZnO:In films have a polycrystalline hexagonal wurtzite structure with lattice parameters a=3.267 Å and c=5.209 Å. Photoluminescence properties of the films are investigated in the temperature range of 11.6–300 K, showing strong luminescence in the whole range of temperature. The temperature dependence of the photoluminescence are carried out with full profile fitting of spectra, which clearly shows that the ultraviolet (UV) emission in In-doped ZnO films at low temperature are attributed to emission of a neutral donor-bound exciton (D∘X) and recombination of donor–acceptor pairs (DAP), while the UV emission at room temperature originates from radiative transition of an electron bound on a donor to the valence band.