Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport
Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport
复制标题
量子点太阳能电池的仿真，包括载流子子带间动力学和输运
DOI：
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发表时间：
2013
影响因子：
3
通讯作者：
F. Cappelluti
中科院分区：
文献类型：
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作者：
M. Gioannini;A. Cédola;Natale Di Santo;F. Bertazzi;F. Cappelluti
本文提出了量子点（QD）太阳能电池的器件级模型，将散体载流子输运的经典漂移扩散方程与描述量子点载流子动力学的一组速率方程耦合在一起。该模型通过利用实验确定的QD光产生和载流子动力学参数，对热辅助过程对InAs/GaAs QD太阳能电池（qdsc）电性能的影响进行了详细的研究。重点分析了开路电压衰减及其与量子点尺寸和载流子寿命的关系。通过将模拟趋势与文献中的实验数据进行比较，验证了建模方法。
This paper presents a device-level model of quantum dot (QD) solar cells, coupling the classical drift-diffusion equations for transport of bulk carriers with a set of rate equations describing the QD carrier dynamics. The model is applied to carry out a detailed study of the impact of thermal-assisted processes on the electrical performance of InAs/GaAs QD solar cells (QDSCs), by exploiting experimentally determined parameters for QD photogeneration and carrier kinetics. Special emphasis is given on the analysis of the open circuit voltage degradation, as well as its dependence on QD size and carrier lifetime. The modeling approach is validated by comparing simulated trends against experimental data in the literature.