Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
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DOI：
10.1021/nl034422t
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发表时间：
2003-08-01
期刊：
影响因子：
10.8
通讯作者：
Yang, PD
中科院分区：
文献类型：
--
作者：
Kuykendall, T;Pauzauskie, P;Yang, PD
首次通过金属引发金属有机化学气相沉积合成了高质量的氮化镓纳米线。在硅、c 面和 a 面蓝宝石基板上制备的导线观察到优异的基板覆盖率。这些线是通过气-液-固机制以金、铁或镍作为生长引发剂形成的，宽度为 15-200 nm。透射电子显微镜证实这些线是单晶的并且主要沿着[210]或[110]方向取向。发现沿[210]方向生长的线具有三角形横截面。输运测量证实该导线为 n 型且具有类似于 65 cm(2)/V.s 的电子迁移率。光致发光测量显示带边发射为 3.35 eV（5 K），明显不存在杂质缺陷造成的低能发射。
High-quality gallium nitride nanowires have been synthesized via metal-initiated metalorganic chemical vapor deposition for the first time. Excellent substrate coverage was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates. The wires were formed via the vapor-liquid-solid mechanism with gold, iron, or nickel as growth initiators and were found to have widths of 15-200 nm. Transmission electron microscopy confirmed that the wires were single-crystalline and were oriented predominantly along the [210] or [110] direction. Wires growing along the [210] orientation were found to have triangular cross-sections. Transport measurements confirmed that the wires were n-type and had electron mobilities of similar to65 cm(2)/V.s. Photoluminescence measurements showed band edge emission at 3.35 eV (at 5 K), with a marked absence of low-energy emission from impurity defects.