Variability Analysis of TiN Metal-Gate FinFETs
Variability Analysis of TiN Metal-Gate FinFETs
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DOI：
10.1109/led.2010.2047091
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发表时间：
2010-06-01
影响因子：
4.9
通讯作者：
Masahara, Meishoku
中科院分区：
文献类型：
--
作者：
Endo, Kazuhiko;O'uchi, Shin-ichi;Masahara, Meishoku
全面研究了TiN FinFET性能的可变性。发现FinFET中的V-th发生变化，并且nMOS和pMOS FinFET的V-th的标准偏差几乎相同。从分析结果中，它被发现的TiN FinFET的V-th的变化是由于TiN金属栅极的功函数变化（WFV）。WFV也负责导通电流的变化。
Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the V-th in the FinFET occurs and the standard deviations of the V-th of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the V-th variation of the TiN FinFET is due to the work function variation (WFV) of TiN metal gate. The WFV is also responsible for the on-current variation.