Doping and annealing effects on ZnO:Cd thin films by sol–gel method
Doping and annealing effects on ZnO:Cd thin films by sol–gel method
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DOI：
10.1016/j.jallcom.2011.01.176
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发表时间：
2011-04
影响因子：
6.2
通讯作者：
Gang Li;Xuebin Zhu;Xianwu Tang;W. Song;Zhaorong Yang;J. Dai;Yuping Sun;Xu Pan;Songyuan Dai
中科院分区：
文献类型：
--
作者：
Gang Li;Xuebin Zhu;Xianwu Tang;W. Song;Zhaorong Yang;J. Dai;Yuping Sun;Xu Pan;Songyuan Dai
本文采用溶胶-凝胶法在玻璃衬底上制备了ZnO：Cd薄膜。掺杂浓度和退火温度的影响进行了仔细研究。所有薄膜均表现出c轴择优取向和光学透明性，可见光透过率> 80%。当掺杂量为10at.%时，室温电阻率最小为0.0341Ωcm 600°C退火温度下的Cd掺杂。ZnO：Cd薄膜的光学带隙随着Cd掺杂浓度的增加而减小，随着退火温度的升高而增大。
In this article, ZnO:Cd films were successfully deposited on glass substrates by a sol–gel technique. The influence of doping concentration and annealing temperature effects was carefully investigated. All films exhibited c-axis preferential orientation and optical transparency with visible transmittance >80%. The minimum room temperature resistivity of 0.0341Ωcm was obtained with 10at.% Cd doping under 600°C annealing temperature. The optical band gap of ZnO:Cd film was reduced as Cd doping concentration increased, while the band gap increased with the increase of annealing temperature.