Properties of dilute InAsN layers grown by liquid phase epitaxy
Properties of dilute InAsN layers grown by liquid phase epitaxy
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DOI：
10.1063/1.2975166
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发表时间：
2008-08
影响因子：
4
通讯作者：
S. Dhar;T. D. Das;M. Mare;A. Krier
中科院分区：
文献类型：
--
作者：
S. Dhar;T. D. Das;M. Mare;A. Krier
报道了从富铟溶液中液相外延生长InAsN的方法。本文描述了含N-∼0.5%的稀相块体合金的光谱特性，这些合金在中红外光谱范围内显示出光致发光，而没有任何生长后退火。发射光谱中的蓝移归因于拉伸应变和带填充效应的共同作用。
We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N∼0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects.