Thermal stability of metal organic vapor phase epitaxy grown AlInN
Thermal stability of metal organic vapor phase epitaxy grown AlInN
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DOI：
10.1063/1.2743744
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发表时间：
2007-05
影响因子：
4
通讯作者：
A. Gadanecz;J. Bläsing;A. Dadgar;C. Hums;A. Krost
中科院分区：
文献类型：
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作者：
A. Gadanecz;J. Bläsing;A. Dadgar;C. Hums;A. Krost
采用金属有机气相外延的方法，在Si（111）衬底的GaN缓冲层上生长了厚度为100nm的AlInN层。通过改变生长温度、In和NH3流量以及反应器压力，得到了三个不同In含量的系列，并在30 ~ 960℃的温度范围内进行了热处理。用x射线衍射对生长层和退火层进行了标准入射几何和掠入射几何的研究。铟浓度为17%-18%的近晶格匹配样品在高达960°C的退火温度下表现出长时间的稳定性。在较高的温度下，严重的Ga-Si熔回蚀刻的开始阻止了进一步的测量。非晶格匹配样本由伪纯和松弛部分组成。在后者中，退火后观察到铟的重新分布和损失。
AlInN layers with a thickness of 100nm were grown by metal organic vapor phase epitaxy on GaN buffer layers on Si(111) substrates. By varying the growth temperature, In and NH3 flows, and reactor pressure, three series with different In contents were produced and thermally treated in the temperature range from 30to960°C. The as grown and annealed layers were investigated by x-ray diffraction in standard and grazing incidence geometry. Nearly lattice matched samples with an indium concentration of 17%–18% show long time stability at annealing temperatures as high as 960°C. At higher temperatures, the onset of severe Ga–Si meltback etching prevents further measurements. Nonlattice matched samples consist of pseudomorphic and relaxed parts. In the latter, a redistribution and loss of indium is observed upon annealing.