Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
复制标题
DOI：
10.1088/1367-2630/ac1641
复制
发表时间：
2021-08-01
影响因子：
3.3
通讯作者：
van der Wal, Caspar H.
中科院分区：
文献类型：
--
作者：
Gilardoni, Carmem M.;Ion, Irina;van der Wal, Caspar H.
SiC 中的过渡金属缺陷会产生局域电子态，这些电子态可以在工业成熟的半导体平台的电信范围内进行光学解决。这导致了对这些缺陷中心的自旋和光学特性的严格审查。对于自旋 1/2 缺陷，缺陷对称性和强自旋轨道耦合的组合可能会限制允许的自旋跃迁，从而产生寿命较长但难以通过微波自旋操纵来解决的缺陷自旋。在这里，我们通过分析和数值结果表明，中心核自旋的存在可以导致电子自旋态的非平凡混合，同时保持缺陷对称性。施加的小磁场和超精细耦合之间的相互作用开启了在没有超精细耦合的情况下被禁止的磁微波跃迁，从而能够有效地操纵电子自旋。我们还发现，平行于 c 轴的微波场可用于通过调节偶极超精细项的相对强度来操纵电子自旋。
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of these defect centers. For spin-1/2 defects, a combination of the defect symmetry and the strong spin-orbit coupling may restrict the allowed spin transitions, giving rise to defect spins that are long lived, but hard to address via microwave spin manipulation. Here, we show via analytical and numerical results that the presence of a central nuclear spin can lead to a non-trivial mixing of electronic spin states, while preserving the defect symmetry. The interplay between a small applied magnetic field and hyperfine coupling opens up magnetic microwave transitions that are forbidden in the absence of hyperfine coupling, enabling efficient manipulation of the electronic spin. We also find that an electric microwave field parallel to the c-axis can be used to manipulate the electronic spin via modulation of the relative strength of the dipolar hyperfine term.