Effect of Contact Method between Interconnects and Electrodes on Area Specific Resistance in Planar Solid Oxide Fuel Cells

Effect of Contact Method between Interconnects and Electrodes on Area Specific Resistance in Planar Solid Oxide Fuel Cells
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DOI:
10.1002/fuce.201300028
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发表时间:
2013-10
期刊:
影响因子:
2.8
通讯作者:
W. Wu;G. Wang;W. Guan;Y. Zhen;W. Wang
W. Wu;G. Wang;W. Guan;Y. Zhen;W. Wang
中科院分区:
工程技术4区
文献类型:
--
作者:
W. Wu;G. Wang;W. Guan;Y. Zhen;W. Wang

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通过设计平面固体氧化物燃料电池(SOFC)互连线与电极之间的界面接触,组装了互连线/电极片/互连线夹层。用四点法记录了不同接触方式在等温氧化和热循环条件下的面阻抗(ASR)值。含NiO集电层的SUS430/Ni-YSZ/SUS430阳极三明治在等温运行时的ASR与不含NiO集电层的阳极三明治的ASR相近,但在热循环过程中ASR更小且更稳定。同时,在不同的连接方式中,SUS430/LSM-YSZ/SUS430带有LSM涂层和LSM集流层的阴极夹层的ASR最低,在恒温氧化和热循环条件下保持不变。阴极与互连之间的接触电阻是SOFC电堆电阻的主要来源。为了验证互连与电极之间不同的接触方式对电堆重复单元性能的影响,组装了一个具有三个阳极支撑的实际电堆,并在热循环下进行了测试。电堆内部重复单元的退化速率和ASR值表明,LSM涂层互连与阴极侧LSM集流层之间的接触是最佳接触。
In this work, interconnect/electrode sheet/interconnect sandwiches are assembled by designing interfacial contact between interconnects and electrodes for planar solid oxide fuel cells (SOFCs). Their area specific resistance (ASR) values of different contact methods under isothermal oxidation and thermal cycling are recorded by four‐point method. The ASR of SUS430/Ni–YSZ/SUS430 anode sandwich with NiO current collecting layer is close to that of anode sandwich without NiO current collecting layer during isothermal operation, but smaller and more stable during thermal cycling. Meanwhile, the lowest ASR is obtained in SUS430/LSM–YSZ/SUS430 cathode sandwich with LSM coated interconnect and LSM current collecting layer among various contact methods between interconnects and cathodes, and remains constant under isothermal oxidation and thermal cycling. Contact resistance between cathodes and interconnects is the main source of the SOFC stack resistance. A real stack with three anode‐supported cells is assembled and tested under thermal cycling to verify the effect of different contact methods between interconnects and electrodes on performance of stack repeating unit. The degradation rate and ASR values of repeating unit inside the stack indicate that the contact between LSM coated interconnect and LSM current collecting layer on cathode side is the optimized contact.